RM8N650LD-T

رقم القطعة
RM8N650LD-T
الصانع
Rectron
الاقسام
MOSFET
بنفايات
ورقة البيانات
وصف
MOSFET D-PAK MOSFET

مواصفات

الصانع
Rectron
الاقسام
MOSFET
Channel Mode
Enhancement
Id - Continuous Drain Current
8 A
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Number of Channels
1 Channel
Package / Case
TO-252-3
Packaging
Reel
Pd - Power Dissipation
80 W
Qg - Gate Charge
22 nC
Rds On - Drain-Source Resistance
540 mOhms
Technology
SI
Transistor Polarity
N-Channel
Vds - Drain-Source Breakdown Voltage
650 V
Vgs - Gate-Source Voltage
- 30 V, + 30 V
Vgs th - Gate-Source Threshold Voltage
2.5 V

آخر مراجعات

Article fits the description on the website and it is good quality. Free in 5 days in France well protected in a bubble envelope. Each value is row in a small bag zip. Trés satisfied with my purchase, I recommend this article and this supplier.

Hello! Order received, very happy. Thank you very much!

Product well received and very quickly for France, all is in order in perfect condition. Thank you. I recommend this company.

Order received all the rules. Ощень мана quickly, to Yakutia 5 day, respect, not tupit. Packed in standard. Driver in the form of niche, soldering standards, not tested. And diode, he ordered. Orders joined fellow

Thank You all fine, packed very well

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