رقم القطعة R5009FNJTL الصانع ROHM Semiconductor الاقسام MOSFET بنفايات ورقة البيانات R5009FNJTL وصف MOSFET Nch 500V 9A Power MOSFET
الصانع ROHM Semiconductor الاقسام MOSFET Channel Mode Enhancement Id - Continuous Drain Current 9 A Maximum Operating Temperature + 150 C Minimum Operating Temperature - 55 C Mounting Style SMD/SMT Number of Channels 1 Channel Package / Case TO-263-3 Packaging Reel Pd - Power Dissipation 119 W Qg - Gate Charge 18 nC Rds On - Drain-Source Resistance 650 mOhms Technology SI Transistor Polarity N-Channel Vds - Drain-Source Breakdown Voltage 500 V Vgs - Gate-Source Voltage - 30 V, + 30 V Vgs th - Gate-Source Threshold Voltage 2 V