رقم القطعة R8002KND3TL1 الصانع ROHM Semiconductor الاقسام MOSFET بنفايات ورقة البيانات R8002KND3TL1 وصف MOSFET
الصانع ROHM Semiconductor الاقسام MOSFET Channel Mode Enhancement Id - Continuous Drain Current 1.6 A Maximum Operating Temperature + 150 C Minimum Operating Temperature - 55 C Mounting Style SMD/SMT Number of Channels 1 Channel Package / Case TO-252-3 Packaging Reel Pd - Power Dissipation 30 W Qg - Gate Charge 7.5 nC Rds On - Drain-Source Resistance 4.2 Ohms Technology SI Transistor Polarity N-Channel Vds - Drain-Source Breakdown Voltage 800 V Vgs - Gate-Source Voltage 20 V, 30 V Vgs th - Gate-Source Threshold Voltage 4.5 V