رقم القطعة R8005ANX الصانع ROHM Semiconductor الاقسام MOSFET بنفايات ورقة البيانات R8005ANX وصف MOSFET 10V Drive Nch MOSFET
الصانع ROHM Semiconductor الاقسام MOSFET Channel Mode Enhancement Id - Continuous Drain Current 5 A Maximum Operating Temperature + 150 C Minimum Operating Temperature - 55 C Mounting Style Through Hole Number of Channels 1 Channel Package / Case TO-220FP-3 Packaging Cut Tape, Reel Pd - Power Dissipation 40 W Qg - Gate Charge 21 nC Rds On - Drain-Source Resistance 2.08 Ohms Technology SI Transistor Polarity N-Channel Vds - Drain-Source Breakdown Voltage 800 V Vgs - Gate-Source Voltage - 30 V, + 30 V Vgs th - Gate-Source Threshold Voltage 3 V