رقم القطعة FQA11N90-F109 الصانع onsemi / Fairchild الاقسام MOSFET بنفايات ورقة البيانات FQA11N90-F109 وصف MOSFET 900V N-Channel QFET
الصانع onsemi / Fairchild الاقسام MOSFET Channel Mode Enhancement Id - Continuous Drain Current 11.4 A Maximum Operating Temperature + 150 C Minimum Operating Temperature - 55 C Mounting Style Through Hole Number of Channels 1 Channel Package / Case TO-3PN-3 Packaging Tube Pd - Power Dissipation 300 W Qg - Gate Charge 94 nC Rds On - Drain-Source Resistance 960 mOhms Technology SI Tradename QFET Transistor Polarity N-Channel Vds - Drain-Source Breakdown Voltage 900 V Vgs - Gate-Source Voltage - 30 V, + 30 V Vgs th - Gate-Source Threshold Voltage 3 V