رقم القطعة FF100R12RT4 الصانع Infineon Technologies الاقسام IGBT Modules بنفايات ورقة البيانات FF100R12RT4 وصف IGBT Modules IGBT Module w/ IGBT & Diode
الصانع Infineon Technologies الاقسام IGBT Modules Collector- Emitter Voltage VCEO Max 1200 V Collector-Emitter Saturation Voltage 2 V Gate-Emitter Leakage Current 100 nA Maximum Operating Temperature + 150 C Minimum Operating Temperature - 40 C Packaging Tray Pd - Power Dissipation 555 W Product IGBT Silicon Modules