رقم القطعة HN1A01FU-Y,LF الصانع Toshiba الاقسام Bipolar Transistors - BJT بنفايات ورقة البيانات HN1A01FU-Y,LF وصف Bipolar Transistors - BJT US6 PLN TRANSISTOR Pd=200mW F=1MHz
الصانع Toshiba الاقسام Bipolar Transistors - BJT Collector- Base Voltage VCBO - 50 V Collector- Emitter Voltage VCEO Max - 50 V Collector-Emitter Saturation Voltage - 0.1 V Emitter- Base Voltage VEBO - 5 V Gain Bandwidth Product fT 80 MHz Maximum DC Collector Current - 150 mA Mounting Style SMD/SMT Package / Case US-6 Packaging Cut Tape, MouseReel, Reel Pd - Power Dissipation 200 mW Qualification AEC-Q101 Series HN1A01 Transistor Polarity PNP